BFP450H6327 Datasheet, PDF (7/28 Pages) Infineon Technologies AG – High Linearity Silicon Bipolar RF Transistor

BFP450
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Product Brief
Product Brief
The BFP450 is a high linearity wideband NPN bipolar RF transistor. The collector design supports voltages up to
V_CEO = 4.5 V and currents up to I_C = 170 mA. With its high linearity at currents as low as 50 mA the device supports
energy efficient designs. The typical transition frequency is approximately 24 GHz, hence the device offers high
power gain at frequencies up to 3 GHz in amplifier applications. The device is housed in an easy to use plastic
package with visible leads.
Datasheet
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Revision 1.1, 2012-09-11