BFP181 Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)

BFP181
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
22
I_C=5mA
dB
0.9GHz
18
1.8GHz
16
0.9GHz
14
1.8GHz
12
10
8
6
0
2
4
6
8
V
12
V_CE
Power Gain G_ma, G_ms = f(f)
Intermodulation Intercept Point IP₃=f(I_C)

(3rd order, Output, Z_S=Z_L=50 )
V_CE = Parameter, f = 900MHz
22
dBm
8V
18
5V
16
14
3V
12
10
2V
8
6
1V
4
2
0
-2
-4
0 2 4 6 8 10 12 14 mA 18
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
34
dB ^IC^=5mA
28
26
24
22
20
18
16
14
12
10V
10
2V
8
1V
6
0.7V
4
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
V_CE = Parameter
24
dB
I_C=5mA
20
18
16
14
12
10
8
10V
6
2V
1V
4
0.7V
2
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
7
Jun-21-2001