AUIRF7675M2TR_15 Datasheet, PDF (7/11 Pages) Infineon Technologies AG – Automotive DirectFET Power MOSFET

AUIRF7675M2TR
60
TOP
Single Pulse
BOTTOM 1% Duty Cycle
50
ID = 11A
40
30
20
10
0
25
50
75
100 125 150 175
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 16, 17).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 15)
Starting TJ , Junction Temperature (°C)
Fig 17. Maximum Avalanche Energy vs. Temperature
P_{D (ave)} = 1/2 ( 1.3·BV·I_av) = T/ Z_thJC
I_av = 2T/ [1.3·BV·Z_th]
E_{AS (AR)} = P_{D (ave)}·t_av
Fig 18a. Unclamped Inductive Test Circuit
Fig 18b. Unclamped Inductive Waveforms
VDD
Fig 19a. Gate Charge Test Circuit
Fig 19b. Gate Charge Waveform
Fig 20a. Switching Time Test Circuit
7
Fig 20b. Switching Time Waveforms
2015-12-14