AUIRF1010EZ Datasheet, PDF (7/13 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRF1010EZ/S/L
1000
Duty Cycle = Single Pulse
100
0.01
10
0.05
0.10
1
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming  Tj = 25°C due to
avalanche losses
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
Fig 15. Typical Avalanche Current vs. Pulse width
1.0E-02
1.0E-01
100
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 51A
75
50
25
0
25
50
75
100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
P_{D (ave)} = 1/2 ( 1.3·BV·I_av) = T/ Z_thJC
I_av = 2T/ [1.3·BV·Z_th]
E_{AS (AR)} = P_{D (ave)}·t_av
7
2015-9-30