TLE6216G Datasheet, PDF (6/17 Pages) Infineon Technologies AG – Smart Quad Channel Low-Side Switch

Datasheet TLE 6216
Electrical Characteristics
Parameter and Conditions
V_S = 4.8 to 18 V ; T_j = - 40 °C to + 150 °C
(unless otherwise specified)
Symbol
1. Power Supply (V_S)
Supply current (Outputs ON)
Supply current (Outputs OFF)
V_ENA = L, V_STBY = H
Operating voltage
Standby current
I_S
I_S
V_S
V_STBY = L
I_S
2. Power Outputs
ON state resistance Channel 1,2
I_D = 1A; V_S ³ 9.5 V
T_j = 25 ° C
T_j = 125°C ¹
T_j = 150°C ²
ON state resistance Channel 3,4
T_j = 25 ° C
I_D = 1A; V_S ³ 9.5 V
T_j = 125°C ¹
T_j = 150°C ²
Z-Diode clamping voltage (OUT1...4) I_D ³ 100 mA
Pull down resistor
T_j = 25 °C
V_STBY = H, V_IN = L
T_j = -40 °C ...150°C
Output Leakage Current
VSTBY = L
Tj = -40°C...150°C
wafer test at 25°C
Output on delay time ³
Output off delay time ³
Output on fall time ³
Output off rise time ³
Output off status delay time ³
Output on status delay time ⁴
I_D = 1 A
I_D = 1 A
I_D = 1 A
I_D = 1 A
I_D = 1 A
Overload switch-off delay time
R_DS(ON)
R_DS(ON)
V_DS(AZ)
R_PD
I_Dlk
t_on
t_off
t_fall
t_rise
t₄
t₅
t_DSO
3. Digital Inputs (IN1, IN2, IN3, IN4, ENA)
Input low voltage
Input high voltage
Input voltage hysteresis ⁴
Input pull down current
Enable pull down current
V_IN = 5 V; V_S ³ 6.5 V
V_ENA = 5 V; V_S ³ 6.5 V
V_INL
V_INH
V_INHys
I_IN
I_ENA
4. Digital Status Outputs (ST1 - ST4) open Drain
Output voltage low
Leakage current high
I_ST = 2 mA
V_STL
I_STH
Values
min typ
Unit
max
8 mA
4 mA
4.8
32
V
10 µA
0.2
W
0.5
0.5
0.35
W
0.75
0.75
45
60
V
14 20 26 kW
10
40
5
mA
1
mA
0
5 25 µs
5
40
5
50
5
50
10
60
50
50 100 300
- 0.3
2.0
50 100
10 30
10 20
1.0
V
6.0
V
mV
60 µA
40 µA
0.5
V
2 µA
1 _{Measured on P-DSO-20 devices}
2 _{Measured on chip, bond wires not included}
3 _{See timing diagram, resitive load condition; VS ³ 9 V}
4 _{This parameter will not be tested but assured by design}
V7.1
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18.10.02