SPP03N60S5_09 Datasheet, PDF (6/10 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

SPP03N60S5
5 Drain-source on-state resistance
R_DS(on) = f (T_j)
parameter : I_D = 2 A, V_GS = 10 V
SPP03N60S5
8
Ω
6 Typ. transfer characteristics
I_D= f ( V_GS ); V_DS≥ 2 x I_D x R_DS(on)max
parameter: t_p = 10 µs
8
A
6
6
5
5
4
4
3
3
2
98%
2
typ
1
1
0
-60 -20 20
60 100 °C
180
T_j
7 Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_D = 3.2 A pulsed
SPP03N60S5
16
V
0.2 V_{DS max}
12 ^{0.8 VDS max}
10
0
0
4
8
12
V
20
V_GS
8 Forward characteristics of body diode
I_F = f (V_SD)
parameter: T_j , tp = 10 µs
10 ^{1 SPP03N60S5}
A
10 ⁰
8
6
4
2
0
0 2 4 6 8 10 12 14 16 nC 19
Q_Gate
Rev. 2.7
Page 6
10 ^-1
10 ^-2
0
T_j = 25 °C typ
T_j = 150 °C typ
T_j = 25 °C (98%)
T_j = 150 °C (98%)
0.4 0.8 1.2 1.6
2 2.4 V 3
V_SD
2009-11-26