SPP02N60S5 Datasheet, PDF (6/10 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

5 Typ. transfer characteristics
I_D= f ( V_GS ); V_DS≥ 2 x I_D x R_DS(on)max
parameter: t_p = 10 µs
6
A
4
SPP02N60S5
SPB02N60S5
6 Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_D = 1.8 A pulsed
SPP02N60S5
16
V
0.2 V_{DS max}
12 ^{0.8 VDS max}
10
3
8
6
2
4
1
2
0
0
4
8
12
V_GS
20
V
0
0 1 2 3 4 5 6 7 8 nC 10
Q_Gate
7 Forward characteristics of body diode
I_F = f (V_SD)
parameter: T_j , tp = 10 µs
10 ^{1 SPP02N60S5}
A
10 ⁰
8 Avalanche SOA
I_AR = f (t_AR)
par.: T_j ≤ 150 °C
2
A
1.6
1.4
1.2
T_j(START)=25°C
1
10 ^-1
10 ^-2
0
T_j = 25 °C typ
T_j = 150 °C typ
T_j = 25 °C (98%)
T_j = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
V_SD
Rev. 2.1
Page 6
0.8 _{Tj(START)=125°C}
0.6
0.4
0.2
0
10
-3
10 ^-2
10 ^-1
10 ⁰
10 ¹
10 ²
µs ^{10 4}
t_AR
2004-03-30