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IPX60R280P6 Datasheet, PDF (6/19 Pages) Infineon Technologies AG – Metal Oxide Semiconductor Field Effect Transistor
600VCoolMOS™P6PowerTransistor
IPW60R280P6,IPB60R280P6,IPP60R280P6,
IPA60R280P6
4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table6Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V(BR)DSS
V(GS)th
IDSS
IGSS
RDS(on)
RG
Table7Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance,
energy related1)
Effective output capacitance,
time related2)
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Table8Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
600
3.5
-
-
-
-
-
-
Values
Typ. Max.
-
-
4.0 4.5
-
1
10 -
-
100
0.252 0.280
0.655 -
5.5 -
Unit
V
V
µA
nA
Ω
Ω
Note/TestCondition
VGS=0V,ID=1mA
VDS=VGS,ID=0.43mA
VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
VGS=20V,VDS=0V
VGS=10V,ID=5.2A,Tj=25°C
VGS=10V,ID=5.2A,Tj=150°C
f=1MHz,opendrain
Min.
-
-
Values
Typ. Max.
1190 -
54 -
Unit Note/TestCondition
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=100V,f=1MHz
-
44 -
pF VGS=0V,VDS=0...400V
-
182 -
pF ID=constant,VGS=0V,VDS=0...400V
-
12 -
ns
VDD=400V,VGS=13V,ID=6.5A,
RG=3.4Ω;seetable11
-
6
-
ns
VDD=400V,VGS=13V,ID=6.5A,
RG=3.4Ω;seetable11
-
36 -
ns
VDD=400V,VGS=13V,ID=6.5A,
RG=3.4Ω;seetable11
-
6
-
ns
VDD=400V,VGS=13V,ID=6.5A,
RG=3.4Ω;seetable11
Min.
-
-
-
-
Values
Typ. Max.
7
-
9.5 -
25.5 -
6.1 -
Unit Note/TestCondition
nC VDD=400V,ID=6.5A,VGS=0to10V
nC VDD=400V,ID=6.5A,VGS=0to10V
nC VDD=400V,ID=6.5A,VGS=0to10V
V VDD=400V,ID=6.5A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
Final Data Sheet
6
Rev.2.2,2015-07-10