IPW60R075CP Datasheet, PDF (6/11 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

9 Typ. gate charge
V _GS=f(Q _gate); I _D=26 A pulsed
parameter: V _DD
10
8
120 V
400 V
6
IPW60R075CP
10 Forward characteristics of reverse diode
I _F=f(V _SD)
parameter: T _j
10²
25 °C, 98%
150 °C
25 °C
150 °C, 98%
10¹
4
10⁰
2
0
10^-1
0
20
40
60
80
100
0
0.5
1
1.5
2
Q _gate [nC]
V _SD [V]
11 Avalanche energy
E _AS=f(T _j); I _D=11 A; V _DD=50 V
12 Drain-source breakdown voltage
V _BR(DSS)=f(T _j); I _D=0.25 mA
1200
700
1000
660
800
600
620
400
580
200
0
540
20
60
100
140
180
-60 -20
20
60 100 140 180
T _j [°C]
T _j [°C]
Rev. 2.3
page 6
2009-05-12
Please note the new package dimensions arccording to PCN 2009-134-A