IPP90R340C3 Datasheet, PDF (6/10 Pages) Infineon Technologies AG – CoolMOS™ Power Transistor

9 Typ. gate charge
V _GS=f(Q _gate); I _D=9.2 A pulsed
parameter: V _DD
10
IPP90R340C3
10 Forward characteristics of reverse diode
I _F=f(V _SD)
parameter: T _J
10²
8
25 °C, 98%
150 °C, 98%
10¹
6
400 V
720 V
150 °C
25 °C
4
10⁰
2
0
10^-1
0
20
40
60
80
100
0
0.5
1
1.5
2
Q _gate [nC]
V _SD [V]
11 Avalanche energy
E _AS=f(T _J); I _D=3.1A; V _DD=50 V
12 Drain-source breakdown voltage
V _BR(DSS)=f(T _J); I _D=0.25 mA
700
1050
600
1000
500
950
400
300
900
200
850
100
0
800
25
50
75
100
125
150
-60 -20
20
60 100 140 180
T _J [°C]
T _J [°C]
Rev. 1.0
page 6
2008-07-29