IPP12CN10L_11 Datasheet, PDF (6/10 Pages) Infineon Technologies AG – OptiMOS®2 Power-Transistor

9 Drain-source on-state resistance
R _DS(on)=f(T _j); I _D=69 A; V _GS=10 V
30
IPS12CN10L G
IPP12CN10L G
10 Typ. gate threshold voltage
V _GS(th)=f(T _j); V _GS=V _DS
parameter: I _D
2.5
25
20
15
98 %
typ
10
5
2
830 µA
83 µA
1.5
1
0.5
0
-60 -20
20
60 100 140 180
T_j [°C]
0
-60 -20 20
60 100 140 180
T_j [°C]
11 Typ. capacitances
C =f(V _DS); V _GS=0 V; f =1 MHz
10⁴
12 Forward characteristics of reverse diode
I _F=f(V _SD)
parameter: T _j
10³
Ciss
Coss
10³
10²
Crss
10²
175 °C, 98%
175 °C
10¹
25 °C, 98%
25 °C
10¹
0
Rev. 1.03
20
40
60
V_DS [V]
10⁰
80
0
page 6
0.5
1
1.5
2
V_SD [V]
2011-09-05