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IPP100N08S2L-07 Datasheet, PDF (6/8 Pages) Infineon Technologies AG – OptiMOS® Power-Transistor
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9 Typ. Drain-source on-state resistance
R DS(ON) = f(T j)
parameter: I D = 80 A; VGS = 10 V
12
IPB100N08S2L-07
IPP100N08S2L-07
10 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
2.5
10
2
1250µA
8
1.5
250µA
6
1
4
0.5
2
-60 -20
20
60 100 140 180
T j [°C]
0
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
104
12 Typical forward diode characteristicis
IF = f(VSD)
parameter: T j
103
Ciss
102
Coss
103
Crss
101
175 °C 25 °C
102
0
5
10
15
20
25
30
V DS [V]
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD [V]
Rev. 1.0
page 6
2006-03-03
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