IPL65R165CFD Datasheet, PDF (6/15 Pages) Infineon Technologies AG – Reduced board space consumption

650VCoolMOS™CFD2PowerTransistor
IPL65R165CFD
4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V(BR)DSS
VGS(th)
IDSS
Gate-source leakage current
Drain-source on-state resistance
IGSS
RDS(on)
Gate resistance
RG
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance, energy
related¹⁾
Effective output capacitance, time
related²⁾
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Co(er)
Co(tr)
td(on)
tr
td(off)
tf
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
650
3.5
Values
Unit Note/TestCondition
Typ. Max.
V VGS=0V,ID=1mA
4
4.5
V
VDS=VGS,ID=0.9mA
1
µA VDS=650V,VGS=0V,Tj=25°C
300
VDS=650V,VGS=0V,Tj=150°C
100 nA VGS=20V,VDS=0V
0.149 0.165 Ω VGS=10V,ID=9.3A,Tj=25°C
0.386
VGS=10V,ID=9.3A,Tj=150°C
1.5
Ω f=1MHz,opendrain
Min.
Values
Typ. Max.
2340
110
Unit Note/TestCondition
pF VGS=0V,VDS=100V,f=1MHz
pF
90
pF VGS=0V,VDS=0...400V
420
12.4
7.6
52.8
5.6
pF
ID=constant,VGS=0V,
VDS=0...400V
ns V_DD=400V,V_GS=13V,I_D=14.0A,
ns
RG=1.8Ω
(see table 9)
ns
ns
Min.
Values
Typ. Max.
15
47
86
6.4
Unit Note/TestCondition
nC VDD=480V,ID=14A,VGS=0to10V
nC
nC
V
1) _{Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400V}
2) _{Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400V}
Final Data Sheet
6
Rev.2.0,2014-03-19