IPD65R1K0CE Datasheet, PDF (6/14 Pages) Infineon Technologies AG – 650V CoolMOSª CE Power Transistor

650VCoolMOSªCEPowerTransistor
IPD65R1K0CE
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.9 -
226 -
1.3 -
9.9 -
Unit Note/TestCondition
V VGS=0V,IF=2.2A,Tj=25°C
ns
VR=400V,IF=2.2A,diF/dt=100A/µs;
see table 8
µC
VR=400V,IF=2.2A,diF/dt=100A/µs;
see table 8
A
VR=400V,IF=2.2A,diF/dt=100A/µs;
see table 8
Final Data Sheet
6
Rev.2.0,2016-02-26