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IPD50R650CE_16 Datasheet, PDF (6/13 Pages) Infineon Technologies AG – 500V CoolMOSª CE Power Transistor
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500VCoolMOSªCEPowerTransistor
IPD50R650CE
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
75
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
0
Ptot=f(TC)
40
80
120
TC[°C]
Diagram2:Safeoperatingarea
102
101
1 µs
10 µs
100
100 µs
1 ms
10 ms
10-1
DC
10-2
160
100
101
102
103
VDS[V]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
102
Diagram4:Max.transientthermalimpedance
101
101
1 µs
0.5
100
10 µs
0.2
0.1
100
0.05
100 µs
0.02
1 ms
10-1
0.01
10-1
10 ms
single pulse
DC
10-2
100
101
102
VDS[V]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-2
103
10-5
10-4
10-3
10-2
10-1
tp[s]
ZthJC=f(tP);parameter:D=tp/T
6
Rev.2.3,2016-06-13
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