IPD30N03S2L-10 Datasheet, PDF (6/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

9 Typ. Drain-source on-state resistance
R _DS(ON) = f(T _j)
parameter: I _D = 30 A; V_GS = 10 V
15
IPD30N03S2L-10
10 Typ. gate threshold voltage
V _GS(th) = f(T _j); V _GS = V _DS
parameter: I _D
2.5
13
2
400 µA
11
1.5
50 µA
9
1
7
0.5
5
-60 -20 20
60 100 140 180
T _j [°C]
0
-60 -20
20
60 100 140 180
T _j [°C]
11 Typ. capacitances
C = f(V _DS); V _GS = 0 V; f = 1 MHz
10⁴
12 Typical forward diode characteristicis
IF = f(V_SD)
parameter: T _j
Ciss
10³
Coss
Crss
10²
175 °C
25 °C
0
5
10
15
20
25
30
V _DS [V]
0.4
0.6
0.8
1
V _SD [V]
Rev. 1.0
page 6
1.2
1.4
2006-07-18