IPD220N06L3G Datasheet, PDF (6/9 Pages) Infineon Technologies AG – OptiMOS(TM)3 Power-Transistor

IPD220N06L3 G
9 Drain-source on-state resistance
R _DS(on)=f(T _j); I _D=30 A; V _GS=10 V
50
10 Typ. gate threshold voltage
V _GS(th)=f(T _j); V _GS=V _DS
parameter: I _D
2.5
45
40
2
35
110 µA
30
max
25
1.5
11 µA
20
typ
1
15
10
0.5
5
0
-60 -20
20
60 100 140 180
T _j [°C]
0
-60 -20
20
60 100 140 180
T _j [°C]
11 Typ. capacitances
C =f(V _DS); V _GS=0 V; f =1 MHz
10⁴
12 Forward characteristics of reverse diode
I _F=f(V _SD)
parameter: T _j
10³
10³
10²
10¹
0
Rev. 2.0
Ciss
Coss
Crss
20
40
V _DS [V]
10²
175 °C, 98%
25 °C
10¹
175 °C
25 °C, 98%
10⁰
60
0
page 6
0.5
1
1.5
V _SD [V]
2
2008-12-09