IPD144N06NG Datasheet, PDF (6/9 Pages) Infineon Technologies AG – OptiMOS® Power-Transistor

9 Drain-source on-state resistance
R _DS(on)=f(T _j); I _D=50 A; V _GS=10 V
40
10 Typ. gate threshold voltage
V _GS(th)=f(T _j); V _GS=V _DS
parameter: I _D
5
IPD144N06N G
30
20
98 %
typ
10
4
800 µA
3
80 µA
2
1
0
-60
-20
20
60 100 140 180
T _j [°C]
0
-60
-20
20
60 100 140 180
T _j [°C]
11 Typ. capacitances
C =f(V _DS); V _GS=0 V; f =1 MHz
10000
12 Forward characteristics of reverse diode
I _F=f(V _SD)
parameter: T _j
10³
1000
100
Ciss
Coss
Crss
10²
175 °C
25 °C
175°C 98%
25°C 98%
10¹
10⁰
10
0
Rev.1.22
5
10
15
20
25
30
V _DS [V]
10^-1
0
page 6
0.5
1
1.5
V _SD [V]
2
2008-07-22