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IPD050N03LG_13 Datasheet, PDF (6/12 Pages) Infineon Technologies AG – OptiMOS®3 Power-Transistor
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=30 A; V GS=10 V
10
IPD050N03L G
IPS050N03L G
IPF050N03L G
IPU050N03L G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS; I D=250 µA
2.5
8
2
6
1.5
98 %
typ
4
1
2
0.5
0
-60 -20
20
60 100 140 180
Tj [°C]
0
-60 -20 20
60 100 140 180
Tj [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
Ciss
103
Coss
102
Crss
25 °C, 98%
102
25 °C
175 °C
175 °C, 98%
z
101
101
0
Rev. 2.0
10
20
VDS [V]
100
30
0
page 6
0.5
1
1.5
2
VSD [V]
2013-10-28
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