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IPC100N04S5L-1R1 Datasheet, PDF (6/9 Pages) Infineon Technologies AG – OptiMOS™-5 Power-Transistor
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9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
2
1.5
900 µA
90 µA
1
0.5
IPC100N04S5L-1R1
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
104
Ciss
Coss
103
Crss
102
0
-60 -20 20
60 100 140 180
Tj [°C]
101
0
10
20
30
VDS [V]
11 Typical forward diode characteristics
IF = f(VSD)
parameter: T j
103
12 Avalanche characteristics
I A S= f(t AV)
parameter: Tj(start)
1000
102
175 °C 25 °C
175 °C
25 °C
101
100
10
25 °C
100 °C
150 °C
100
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4
1
VSD [V]
Rev. 1.1
page 6
10
100
tAV [µs]
1000
2016-09-07
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