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IPB77N06S2-12 Datasheet, PDF (6/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor
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9 Typ. Drain-source on-state resistance
R DS(ON) = f(T j)
parameter: I D = 80 A; VGS = 10 V
20
IPB77N06S2-12
IPP77N06S2-12
10 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
4
18
3.5
16
465 µA
3
14
93 µA
12
2.5
10
2
8
1.5
6
4
-60 -20 20 60 100 140 180
T j [°C]
1
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
104
12 Typical forward diode characteristicis
IF = f(VSD)
parameter: T j
103
Ciss
102
103
Coss
101
175 °C 25 °C
Crss
102
0
5
10
15
20
25
30
V DS [V]
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD [V]
Rev. 1.0
page 6
2005-12-27
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