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IPB45P03P4L-11 Datasheet, PDF (6/9 Pages) Infineon Technologies AG – OptiMOS-P2 Power-Transistor
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9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
2
IPB45P03P4L-11
IPI45P03P4L-11, IPP45P03P4L-11
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
104
1.75
-850µA
1.5
-85µA
103
1.25
Ciss
Coss
1
0.75
102
0.5
0.25
0
-60 -20
20
60 100 140 180
T j [°C]
101
0
5
10
15
20
-V DS [V]
11 Typical forward diode characteristicis
IF = f(VSD)
parameter: T j
103
12 Avalanche characteristics
I AS = f(t AV)
parameter: Tj(start)
1000
Crss
25
30
102
101
175 °C 25 °C
100
10
25 °C
100 °C
150 °C
100
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
1
-V SD [V]
Rev. 1.0
page 6
10
100
t AV [µs]
1000
2008-07-29
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