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IPB180N10S4-02 Datasheet, PDF (6/9 Pages) Infineon Technologies AG – OptiMOSTM-T2 Power-Transistor
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IPB180N10S4-02
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
4
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
105
3.5
3
104
2750 µA
2.5
275 µA
2
103
Ciss
Coss
1.5
1
-60 -20 20
60 100 140 180
Tj [°C]
102
0
5
10
15
20
VDS [V]
11 Typical forward diode characteristicis
IF = f(VSD)
parameter: T j
103
12 Typ. avalanche characteristics
I AS = f(t AV)
parameter: Tj(start)
1000
Crss
25
30
102
175 °C 25 °C
101
100
10
150 °C
25 °C
100 °C
100
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4
1
VSD [V]
Rev. 1.0
page 6
10
100
tAV [µs]
1000
2013-01-30
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