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IPB180N03S4L-H0 Datasheet, PDF (6/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor
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IPB180N03S4L-H0
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
2
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
105
1.75
2000 µA
1.5
200 µA
104
1.25
1
Ciss
Coss
0.75
103
0.5
0.25
Crss
0
-60 -20
20
60 100 140 180
T j [°C]
0
5
10
15
20
25
30
V DS [V]
11 Typical forward diode characteristicis
IF = f(VSD)
parameter: T j
103
12 Typ. avalanche characteristics
I AS = f(t AV)
parameter: Tj(start)
1000
102
100
175 °C 25 °C
101
10
25 °C
100 °C
150 °C
100
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4
1
V SD [V]
Rev. 0.1
page 6
10
100
t AV [µs]
1000
2009-11-19
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