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IPB160N04S3-H2 Datasheet, PDF (6/9 Pages) Infineon Technologies AG – OptiMOS-T Power-Transistor
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IPB160N04S3-H2
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
4
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
105
3.5
3
1500µA
104
150µA
2.5
2
103
Ciss
Coss
1.5
Crss
1
-60 -20
20
60 100 140 180
T j [°C]
0
5
10
15
20
25
30
V DS [V]
11 Typical forward diode characteristicis
IF = f(VSD)
parameter: T j
103
12 Typ. avalanche characteristics
I AS = f(t AV)
parameter: Tj(start)
1000
102
175 °C 25 °C
101
100
10
150°C
25°C
100°C
100
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4
1
V SD [V]
Rev. 1.0
page 6
10
100
t AV [µs]
1000
2007-04-16
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