IPB10N03LB Datasheet, PDF (6/9 Pages) Infineon Technologies AG – OptiMOS®2 Power-Transistor

9 Drain-source on-state resistance
R _DS(on)=f(T _j); I _D=50 A; V _GS=10 V
20
10 Typ. gate threshold voltage
V _GS(th)=f(T _j); V _GS=V _DS
parameter: I _D
2.5
IPB10N03LB
18
16
2
14
12
98 %
10
typ
8
200 µA
1.5
20 µA
1
6
4
0.5
2
0
-60
-20
20
60 100 140 180
T _j [°C]
0
-60 -20
20
60 100 140 180
T _j [°C]
11 Typ. Capacitances
C =f(V _DS); V _GS=0 V; f =1 MHz
10000
12 Forward characteristics of reverse diode
I _F=f(V _SD)
parameter: T _j
1000
25 °C
1000
Ciss
Coss
100
175 °C
175°C 98%
100
Crss
10
25°C 98%
10
0
Rev. 0.92
5
10
15
20
25
30
V _DS [V]
1
0.0
page 6
0.5
1.0
1.5
V _SD [V]
2.0
2005-10-27