IPB100N06S3L-03_07 Datasheet, PDF (6/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

9 Typ. gate threshold voltage
V _GS(th) = f(T _j); V _GS = V _DS
parameter: I _D
3
IPB100N06S3L-03
IPI100N06S3L-03, IPP100N06S3L-03
10 Typ. capacitances
C = f(V _DS); V _GS = 0 V; f = 1 MHz
10⁵
2.5
2
2300µA
1.5
230µA
1
Ciss
10^{4 Coss}
Crss
0.5
0
-60 -20
20
60 100 140 180
T _j [°C]
10³
0
5
10
15
20
25
30
V _DS [V]
11 Typical forward diode characteristicis
IF = f(V_SD)
parameter: T _j
10³
12 Typ. avalanche characteristics
I _AV = f(t _AV)
parameter: T_j(start)
1000
10²
175 °C 25 °C
10¹
100
10
150°C
100°C
25°C
10⁰
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4
1
V _SD [V]
Rev. 1.1
page 6
10
100
t _AV [µs]
1000
2007-11-07