IPB080N03LG Datasheet, PDF (6/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

9 Drain-source on-state resistance
R _DS(on)=f(T _j); I _D=30 A; V _GS=10 V
IPP080N03L G
IPB080N03L G
10 Typ. gate threshold voltage
V _GS(th)=f(T _j); V _GS=V _DS; I _D=250 µA
14
2.5
12
2
10
98 %
8
1.5
typ
6
1
4
0.5
2
0
-60
-20
20
60 100 140 180
T _j [°C]
0
-60 -20
20
60 100 140 180
T _j [°C]
11 Typ. capacitances
C =f(V _DS); V _GS=0 V; f =1 MHz
10^{4 10000}
12 Forward characteristics of reverse diode
I _F=f(V _SD)
parameter: T _j
1000
25 °C
103
1000
Ciss
Coss
100
25 °C, 98%
175 °C, 98%
102
100
Crss
175 °C
10
101
10
0
Rev. 1.04
5
10
15
20
25
30
V _DS [V]
1
0.0
page 6
0.5
1.0
1.5
V _SD [V]
2.0
2010-01-19