IKW75N65ES5_15 Datasheet, PDF (6/16 Pages) Infineon Technologies AG – 5 high Speed soft switching IGBT with full current rated RAPID 1 diode

IKW75N65ES5
TRENCHSTOP^TM5softswitchingIGBT
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
Tvj=25°C,
-
36
- ns
tr
VCC=400V,IC=38.5A,
VGE=0.0/15.0V,
td(off)
RG(on)=18.0Ω,RG(off)=5.6Ω,
-
24
- ns
- 158 - ns
tf
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
-
16
- ns
Eon
Energy losses include “tail” and
- 0.96 - mJ
Eoff
diode reverse recovery.
- 0.36 - mJ
Ets
- 1.32 - mJ
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=75.0A,
diF/dt=1230A/µs
Tvj=25°C,
VR=400V,
IF=38.5A,
diF/dt=1330A/µs
-
85
- ns
- 1.80 - µC
- 31.0 - A
- -2170 - A/µs
-
64
- ns
- 1.25 - µC
- 29.0 - A
- -2540 - A/µs
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=150°C,
VCC=400V,IC=75.0A,
VGE=0.0/15.0V,
RG(on)=18.0Ω,RG(off)=5.6Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=150°C,
VCC=400V,IC=38.5A,
VGE=0.0/15.0V,
RG(on)=18.0Ω,RG(off)=5.6Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
-
38
- ns
-
56
- ns
- 170 - ns
-
63
- ns
- 3.45 - mJ
- 1.47 - mJ
- 4.92 - mJ
-
34
- ns
-
28
- ns
- 200 - ns
-
46
- ns
- 1.60 - mJ
- 0.68 - mJ
- 2.28 - mJ
6
Rev.2.1,2015-09-22