IDP15E65D1 Datasheet, PDF (6/11 Pages) Infineon Technologies AG – 650 V Emitter Controlled technology

IDP15E65D1
EmitterControlledDiodeRapid1Series
100
35
30
80
25
60
20
15
40
10
20
5
0
25
50
75 100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 1. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
0
25
50
75
100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 2. Diodeforwardcurrentasafunctionofcase
temperature
(Tvj≤175°C)
10
200
Tj=25°C, IF = 15A
Tj=125°C, IF = 15A
175
Tj=175°C, IF = 15A
150
1
125
D=0.5
0.2
0.1
0.05
0.1
0.02
0.01
single pulse
0.01
1E-6
i:
1
2
3
4
5
6
ri[K/W]: 0.033644 0.33657 0.63479 0.58708 0.041314 2.0E-3
τi[s]: 1.8E-5 1.8E-4 9.7E-4 5.7E-3 0.07842986 2.0366
1E-5 1E-4 0.001 0.01 0.1
1
tp,PULSEWIDTH[s]
Figure 3. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
100
75
50
25
0
200 600 1000 1400 1800 2200 2600 3000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 4. Typicalreverserecoverytimeasafunctionof
diodecurrentslope
(VR=400V)
6
Rev.2.2,2013-12-16