BUZ73ALH Datasheet, PDF (6/10 Pages) Infineon Technologies AG – SIPMOS Power Transistor

BUZ 73AL H
Typ. output characteristics
I_D = ƒ(V_DS)
parameter: t_p = 80 µs
13
P_tot = 40W
A
l
kjihgf e
11
I
D
10
9
8
7
6
5
4
3
2
d
V_GS [V]
a 2.0
b 2.5
c 3.0
d 3.5
e 4.0
f 4.5
c g 5.0
h 5.5
i 6.0
j 7.0
k 8.0
l 10.0
b
1
0
a
0 2 4 6 8 10 12 V 16
V_DS
Typ. drain-source on-resistance
R_{DS (on)} = ƒ(I_D)
parameter: V_GS
1.8
a
b
Ω
R
DS (on)
1.4
1.2
1.0
0.8
c
0.6
i gk^{e f}j^dh
0.4
0.2 ^{VGS [V] =}
abc d e f _{gh i j k}
2.50 3.0 3.5 4.0 4.5 5.0 _{5.5 6.0 7.0 8.0 10.0}
0.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 A 7.5
I_D
Typ. transfer characteristics I_D = f (V_GS)
parameter: t_p = 80 µs
V_DS≥2 x I_D x R_DS(on)max
18
A
I_D
14
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 V 10
V_GS
Typ. forward transconductance g_fs = f (I_D)
parameter: t_p = 80 µs,
V_DS≥2 x I_D x R_DS(on)max
12
S
10
g_fs
9
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 A 15
I_D
Rev. 2.4
Page 6
2009-11-10