BSZ050N03MSG Datasheet, PDF (6/9 Pages) Infineon Technologies AG – OptiMOS™3 M-Series Power-MOSFET

9 Drain-source on-state resistance
R _DS(on)=f(T _j); I _D=20 A; V _GS=10 V
BSZ050N03MS G
10 Typ. gate threshold voltage
V _GS(th)=f(T _j); V _GS=V _DS; I _D=250 µA
9
2.4
8
2
7
6
1.6
5
98 %
1.2
4
typ
3
0.8
2
0.4
1
0
-60
-20
20
60
100 140 180
T _j [°C]
0
-60 -20
20
60 100 140 180
T _j [°C]
11 Typ. capacitances
C =f(V _DS); V _GS=0 V; f =1 MHz
10^{4 10000}
12 Forward characteristics of reverse diode
I _F=f(V _SD)
parameter: T _j
1000
103
1000
Ciss
Coss
100
25 °C
150 °C, 98%
102
100
Crss
150 °C
10
25 °C, 98%
101
10
0
Rev. 1.7
10
20
V _DS [V]
1
30
0.0
page 6
0.5
1.0
1.5
V _SD [V]
2.0
2009-11-05