BSS192P Datasheet, PDF (6/8 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

Preliminary data
BSS 192 P
9 Drain-source on-state resistance
R_DS(on) = f (T_j)
parameter : I_D = -0.19 A, V_GS = -10 V
BSS 192 P
32
Ω
24
20
16
98%
12
8
typ
4
0
-60 -20
20
60 100 °C
180
T_j
11 Typ. capacitances
C = f (V_DS)
parameter: V_GS=0, f=1 MHz, T_j = 25 °C
10 ³
10 Typ. gate threshold voltage
V_GS(th) = f (T_j)
parameter: V_GS = V_DS
2.2
V
98%
1.8
1.6
typ.
1.4
1.2
1
2%
0.8
0.6
0.4
-60
-20
20
60
100 °C 160
T_j
12 Forward character. of reverse diode
I_F = f (V_SD)
parameter: T_j
-10 ^{0 BSS 192 P}
pF
10 ²
C_iss
A
-10 ^-1
C_oss
10 ¹
10 ⁰
0
C_rss
6
12
18
24
V
36
-V_DS
-10 ^-2
-10 ^-3
0
T_j = 25 °C typ
T_j = 150 °C typ
T_j = 25 °C (98%)
T_j = 150 °C (98%)
-0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3
V_SD
Page 6
2002-07-25