BSP322P Datasheet, PDF (6/9 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

9 Drain-source on-state resistance
R _DS(on)=f(T _j); I _D=-1 A; V _GS=-10 V
2
10 Typ. gate threshold voltage
V _GS(th)=f(T _j); V _GS=V _DS; I _D=-380 µA
3
BSP322P
1.5
98 %
1
0.5
typ.
2
max.
typ.
min.
1
0
-60
-20
20
60
100
140
T _j [°C]
11 Typ. capacitances
C =f(V _DS); V _GS=0 V; f =1 MHz
10³
0
-60
-20
20
60 100 140 180
T _j [°C]
12 Forward characteristics of reverse diode
I _F=f(V _SD)
parameter: T _j
10
Ciss
1
10²
Coss
0.1
Crss
10¹
0
Rev 1.03
0.01
20
40
60
80
100
0
-V _DS [V]
page 6
150 °C, typ
25 °C, typ
150 °C, 98%
25 °C, 98%
0.5
1
-V _SD [V]
1.5
2009-02-17