BSP296_09 Datasheet, PDF (6/8 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

Rev. 2.1
BSP296
9 Drain-source on-state resistance
R_DS(on) = f (T_j)
parameter : I_D = 1.1 A, V_GS = 10 V
BSP296
2.8
Ω
2.4
2.2
2
1.8
1.6
1.4
1.2
1
98%
0.8
0.6
0.4
typ
0.2
0
-60 -20
20
60 100 °C
180
T_j
11 Typ. capacitances
C = f (V_DS)
parameter: V_GS=0, f=1 MHz, Tj = 25 °C
10 ³
10 Typ. gate threshold voltage
V_GS(th) = f (T_j)
parameter: V_GS = V_DS; I_D =400µA
2.4
V
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60
-20
98%
typ.
2%
20
60
100 _°C 160
T_j
12 Forward character. of reverse diode
I_F = f (V_SD)
parameter: T_j
10 ^{1 BSP296}
A
pF
C_iss
10 ⁰
10 ²
10 ¹
0
C_oss
C_rss
5
10
15
20
V
30
V_DS
10 ^-1
10 ^-2
0
T_j = 25 °C typ
T_j = 150 °C typ
T_j = 25 °C (98%)
T_j = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
V_SD
Page 6
2009-08-18