BSO307N Datasheet, PDF (6/8 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

BSO 307N
Typ. output characteristics
I_D = f (V_DS)
parameter: t_p = 80 µs
BSO 307 N
12 _{Ptot = 2W}
A
l
jhikgf ^e d
10
9
8
7
6
5
4
3
2
V_GS [V]
a
2.5
b
3.0
c
3.5
d
4.0
e
4.5
c^f
5.0
g
5.5
h
6.0
i
6.5
j
7.0
k
8.0
l
10.0
b
1
a
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
V_DS
Typ. capacitances
C = f (V_DS)
parameter: V_GS = 0 V, f = 1 MHz
10 ³
Drain-source on-resistance
R_DS(on) = f (T_j)
parameter : I_D = 4.1 A, V_GS = 4.5 V
BSO 307 N
0.18
Ω
0.14
0.12
0.10
98%
0.08
0.06
typ
0.04
0.02
0.00-60
-20
20
60 100 ˚C
180
T_j
Ciss
pF
Coss
10 ²
Crss
10 ¹
0
5 10 15 20 25 30 V 40
VDS
Data Sheet
6
05.99