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BSO110N03MSG Datasheet, PDF (6/9 Pages) Infineon Technologies AG – OptiMOS™3 M-Series Power-MOSFET
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=12.1 A; V GS=10 V
20
BSO110N03MS G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS; I D=250 µA
2.5
2
15
98 %
1.5
10
typ
1
5
0.5
0
-60
-20
20
60 100 140 180
T j [°C]
0
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
102
103
Ciss
Coss
102
Crss
101
25 °C
150 °C, 98%
101
150 °C
25 °C, 98%
100
100
0
Rev.1.1
10
20
V DS [V]
10-1
30
0
page 6
0.5
1
1.5
V SD [V]
2
2009-11-19
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