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BSG0813NDI_16 Datasheet, PDF (6/14 Pages) Infineon Technologies AG – Dual asymmetric N-channel OptiMOS™5 MOSFET
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5 Safe operating area (Q1)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
1 µs
102
10 µs
100 µs
1 ms
101
10 ms
DC
100
6 Safe operating area (Q2)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
BSG0813NDI
1 µs
102
10 µs
100 µs
1 ms
101
10 ms
DC
100
10-1
10-1
10-1
100
101
102
10-1
100
101
102
VDS [V]
VDS [V]
7 Max. transient thermal impedance (Q1)
Z thJC=f(t p)
parameter: D =t p/T
8 Max. transient thermal impedance (Q2)
Z thJC=f(t p)
parameter: D =t p/T
101
101
0.5
0.2
100
0.1
0.05
0.02
0.01
single pulse
100
0.5
0.2
10-1
0.1
0.05
0.02
0.01
single pulse
10-1
10-5
10-4
10-3
10-2
10-1
100
tp [s]
10-2
10-5
10-4
10-3
10-2
10-1
100
tp [s]
Rev.2.1
page 6
2016-03-08
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