BSC265N10LSFG Datasheet, PDF (6/10 Pages) Infineon Technologies AG – OptiMOS™2 Power-Transistor

9 Drain-source on-state resistance
R _DS(on)=f(T _j); I _D=40 A; V _GS=10 V
45
BSC265N10LSF G
10 Typ. gate threshold voltage
V _GS(th)=f(T _j); V _GS=V _DS
parameter: I _D
3
40
2.5
35
30
98 %
25
typ
20
2
430 µA
43 µA
1.5
15
1
10
0.5
5
0
-60
-20
20
60 100 140 180
T _j [°C]
0
-60 -20
20
60 100 140 180
T _j [°C]
11 Typ. capacitances
C =f(V _DS); V _GS=0 V; f =1 MHz
10⁴
12 Forward characteristics of reverse diode
I _F=f(V _SD)
parameter: T _j
1000
Ciss
10³
Coss
10²
Crss
10¹
100
10
150 °C
25 °C
150 °C, 98%
25 °C, 98%
10⁰
0
Rev. 2.08
20
40
60
V _DS [V]
1
80
0
page 6
0.5
1
1.5
V _SD [V]
2
2009-11-04