BSC084P03NS3G Datasheet, PDF (6/9 Pages) Infineon Technologies AG – OptiMOS P3 Power-Transistor

9 Drain-source on-state resistance
R _DS(on)=f(T _j); I _D=-30 A; V _GS=-10 V
BSC084P03NS3 G
10 Typ. gate threshold voltage
V _GS(th)=f(T _j); V _GS=V _DS; I _D=-105 µA
12
4
3.5
10
3
max.
98 %
8
typ.
6
2.5
typ.
2
min.
1.5
1
0.5
4
-60
-20
20
60 100 140 180
T _j [°C]
0
-60 -20
20
60 100 140 180
T _j [°C]
11 Typ. capacitances
C =f(V _DS); V _GS=0 V; f =1 MHz
10⁴
12 Forward characteristics of reverse diode
I _F=f(V _SD)
parameter: T _j
100
Ciss
Coss
10³
10
150 °C, 98%
150 °C, typ
25 °C, typ
10²
1
25 °C, 98%
Crss
10¹
0
Rev. 2.1
5
10
15
20
25
30
-V _DS [V]
0.1
0
page 6
0.5
1
-V _SD [V]
1.5
2009-11-16