BSC059N04LSG_13 Datasheet, PDF (6/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

9 Drain-source on-state resistance
R _DS(on)=f(T _j); I _D=50 A; V _GS=10 V
10
BSC059N04LS G
10 Typ. gate threshold voltage
V _GS(th)=f(T _j); V _GS=V _DS; I _D=23 µA
2.5
8
2
98 %
6
1.5
typ
4
1
2
0.5
0
-60 -20
20
60 100 140 180
T_j [°C]
0
-60 -20
20
60 100 140 180
T_j [°C]
11 Typ. capacitances
C =f(V _DS); V _GS=0 V; f =1 MHz
12 Forward characteristics of reverse diode
I _F=f(V _SD)
parameter: T _j
10⁴
1000
Ciss
10³
Coss
100
25 °C
150 °C, 98%
10²
150 °C
Crss
10
25 °C, 98%
10¹
10⁰
0
Rev. 2.1
10
20
30
V_DS [V]
1
40
0.0
page 6
0.5
1.0
1.5
2.0
V_SD [V]
2013-05-17