BFR92T Datasheet, PDF (6/7 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFR92T
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
0.8
pF
0.4
0.2
00
5
10
15
V
25
V_CB
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
22
dB
8V
14
5V
3V
10
2V
6
Transition frequency f_T = f (I_C)
V_CE = Parameter
6
GHz
4
8V
5V
3
3V
2
2V
1
1V
00
5 10 15 20 25 ^mA 35
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
12
8V
dB
5V
3V
6
3
2V
0
2
1V
-20
5 10 15 20 25 ^mA 35
I_C
6
-3
1V
-60
5 10 15 20 25 ^mA 35
I_C
Aug-08-2001