BFP540_09 Datasheet, PDF (6/10 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

Third order Intercept Point IP₃=ƒ(I_C)
(Output, Z_S=Z_L=50Ω)
V_CE = parameter, f = 1.8GHz
30
dBm
4V
26
24
3V
22
2V
20
18
1.5V
16
14
12
1V
10
8
6
4
2
0 10 20 30 40 50 60 70 80 mA 100
I_C
Power gain G_ma, G_ms = ƒ(I_C)
V_CE = 2V
f = Parameter in GHz
30
dB
1
20
2
15
3
4
10
5
6
5
0
0 10 20 30 40 50 60 70 mA 90
I_C
BFP540
Transition frequency f_T= ƒ(I_C)
f = 1GHz
V_CE = Parameter in V
35
GHz
25
20
4
3
15
2
1.5
10
1
5
0.5
0
0 10 20 30 40 50 60 70 mA 90
I_C
Power Gain G_ma, G_ms = ƒ(f),
|S₂₁|² = f (f)
V_CE = 2V, I_C = 20mA
50
dB
40
35
30
Gms
25
20
Gma
15
|S21|²
10
5
0
1
2
3
4 GHz
6
G
2009-12-04
6