BFP182 Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

BFP182
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
0.50
pF
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
4
8
12
16 V 22
V_CB
Transition frequency f_T = f (I_C)
V_CE = Parameter
10
GHz
8
7
6
5
4
3
2
1
0
0
5
10
10V
5V
3V
2V
1V
0.7V
15
mA
25
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
23
dB
21
20
19
18
17
16
15
14
13
12
11
10
0
5
10
15
10V
8V
5V
3V
2V
1V
0.7V
mA
25
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
16
dB
14
13
12
11
10
9
8
7
6
5
4
0
5
10
15
10V
3V
2V
1V
0.7V
mA
25
I_C
6
Aug-09-2001