BFP181W Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)

BFP 181W
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
0.5
pF
0.3
0.2
0.1
0.00
4
8
12
16
V
24
V_CB
Transition frequency f_T = f (I_C)
V_CE = Parameter
10
GHz
10V
8
8V
7
5V
6
5
3V
4
2V
3
1V
2
0.7V
1
00
2
4
6
8 10 12 14 mA 17
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
24
dB
10V
20
3V
18
2V
16
14
12
1V
10
0.7V
8
6
4
2
00
2
4
6
8 10 12 14 mA 17
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
20
dB
16
10V
14
5V
3V
12
2V
10
8
1V
6
4
0.7V
2
00
2
4
6
8 10 12 14 mA 17
I_C
6
Oct-12-1999