BC846SH6327XTSA1 Datasheet, PDF (6/10 Pages) Infineon Technologies AG – NPN Silicon AF Transistor Arrays

BC846S/ BC846U/ BC847S
Transition frequency f_T = ƒ(I_C)
V_CE = 5 V
Collector-base capacitance C_cb = ƒ(V_CB)
Emitter-base capacitance C_eb = ƒ(V_EB)
10 ³
MHz
f_{T 5}
EHP00363
10 ²
5
10 ¹
10 ^-1
5 10 ⁰
5 10 ¹
mA 10 ²
Ι_C
Total power dissipation P_tot = ƒ(T_S)
BC846S, BC847S
13
pF
11
10
9
8
7
6
5
CEB
4
3
2
1
CCB
0
0
4
8
12
16 V 22
V_CB/V_EB
Total power dissipation P_tot = ƒ(T_S)
BC846U
300
mW
250
225
200
175
150
125
100
75
50
25
0
0 15 30 45 60 75 90 105 120 °C 150
T_S
300
mW
250
225
200
175
150
125
100
75
50
25
0
0 15 30 45 60 75 90 105 120 °C 150
T_S
6
2012-04-04