TLE6217G_08 Datasheet, PDF (5/19 Pages) Infineon Technologies AG – Smart Quad Channel Low-Side Switch

TLE6217G
Electrical Characteristics
Parameter and Conditions
V_S = 4.8 to 18 V ; T_j = - 40 °C to + 150 °C
(unless otherwise specified)
Symbol Values
min
1. Power Supply (V_S)
Supply current (Outputs ON)
Supply current (Outputs OFF)
V_ENA = L, V_STBY = H
Standby current
Operating voltage
I_S
I_S
V_STBY = L I_S
V_S
4.8
2. Power Outputs
ON state resistance Channel 1,2
I_D = 1A; V_S ≥ 9.5 V
T_j = 25 ° C
T_j = 150°C
R_DS(ON)
ON state resistance Channel 3,4
I_D = 1A; V_S ≥ 9.5 V
T_j = 25 ° C
T_j = 150°C
R_DS(ON)
Z-Diode clamping voltage (OUT1...4) I_D ≥ 100 mA V_DS(AZ)
45
Pull down current
V_STBY = H, V_IN = L I_PD
10
Output Leakage Current
VSTBY = L
I_Dlk
Tj = -40°C...150°C
wafer test at 25°C
Output turn on delay time ¹
I_D = 1 A t_on
0
Output turn off delay time ¹
I_D = 1 A t_off
0
Output on fall time ¹
I_D = 1 A t_fall
3
Output off rise time ¹
I_D = 1 A t_rise
3
Overload switch-off delay time ¹
t_DSO
20
Output off status delay time ²
t_D
500
Failure extension Time for Status Report
t_D-failure
500
Input Suppression Time
Open Load (off) filtering Time ²
t_D-IN
t_fOL(off)
500
10
3. Digital Inputs (IN1, IN2, IN3, IN4, ENA)
Input low voltage
Input high voltage
Input voltage hysteresis ²
Input pull down current
Enable pull down current
V_IN = 5 V; V_S ≥ 6.5 V
V_ENA = 5 V; V_S ≥ 6.5 V
V_INL
V_INH
V_INHys
I_IN
I_ENA
- 0.3
2.0
50
10
10
4. Digital Status Outputs (ST1 - ST4) Open Drain
Output voltage low
I_ST = 2 mA V_STL
Leakage current high
I_STH
Unit
typ
max
8 mA
4 mA
10 μA
32
V
0.2
0.35
20
Ω
0.5
Ω
0.75
60
V
50 μA
5
10
10
10
1200
1200
1200
30
5
μA
1
μA
20 μs
30
30
30
100
3000
3000
3000
100
1.0
V
6.0
V
100
mV
30
60 μA
20
40 μA
0.5
V
2 μA
1 _{See timing diagram, resistive load condition; VS ≥ 9 V}
2 _{This parameter will not be tested but assured by design}
Data Sheet
5
Rev. 6.1, 2008-04