SPD30N06S2L-23 Datasheet, PDF (5/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

SPD30N06S2L-23
5 Typ. output characteristic
I_D = f (V_DS); T_j=25°C
parameter: t_p = 80 µs
SPD30N06S2L-23
75 _{Ptot = 100W}
A
i
60
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45
40
35
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0
0123 45
V_GS [V]
a
3.0
b
3.2
h
c
3.4
d
3.6
e
3.8
f
4.0
g
4.2
g
h
4.5
i
10.0
f
e
d
c
b
a
6V 8
V_DS
6 Typ. drain-source on resistance
R_DS(on) = f (I_D)
parameter: V_GS
SPD30N06S2L-23
75
mΩ
d
e
f
g
h
60
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25
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15
10 V_GS [V] =
de f
5 3.6 3.8 4.0
g hi
4.2 4.5 10.0
0
0
10 20 30 40
i
50 A 65
I_D
7 Typ. transfer characteristics
I_D= f ( V_GS ); V_DS≥ 2 x I_D x R_DS(on)max
parameter: t_p = 80 µs
60
A
50
45
40
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30
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0
0 0.5
1 1.5
2 2.5
3 3.5 4
V5
V_GS
8 Typ. forward transconductance
g_fs = f(I_D); T_j=25°C
parameter: g_fs
45
S
35
30
25
20
15
10
5
0
0
10
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40 A 55
I_D
Page 5
2003-05-09