ITS4200S-ME-O Datasheet, PDF (5/20 Pages) Infineon Technologies AG – Smart High-Side NMOS-Power Switch

4
General Product Characteristics
ITS4200S-ME-O
General Product Characteristics
4.1
Absolute Maximum Ratings
Table 1
Absolute maximum ratings at ²⁾Tj = 25°C unless otherwise specified. Currents flowing into the
device unless otherwise specified in chapter “Block Diagram and Terms”
Parameter
Symbol
Min.
Values
Typ. Max.
Unit Note /
Number
Test Conditi
on
Supply voltage VS
Voltage
Ground Current IGND
V_S
–
–
48
V
4.1.1
Reverse Ground Current
Output stage OUT
V_S
- 0.5
–
–
A
4.1.2
Output Current; (Short circuit current I_OUT
-1
see electrical characteristics)
Self
A
limited
4.1.3
Input IN
Voltage
Current
Temperatures
V_IN
-10
–
V_S
V
I_IN
-5
–
5
mA
4.1.4
4.1.5
Junction Temperature
T_j
-40
–
125
°C
4.1.6
Storage Temperature
T_stg
-55
–
125
°C
4.1.7
Power dissipation
Ta = 25 °C¹⁾
P _tot
–
–
1.4
W
4.1.8
Inductive load switch-off energy dissipation
Tj = 125 °C; V_S=13.5V; IL= 0.5A²⁾ E_AS
–
–
700
mJ single pulse 4.1.9
ESD Susceptibility
ESD susceptibility (input pin)
V_ESD
-1
–
1
kV HBM³⁾
4.1.10
ESD susceptibility (all other pins) V_ESD
-5
–
5
kV HBM³⁾
4.1.11
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70mm thick) copper area for Vbb connection. PCB
is vertical without blown air
2) Not subject to production test, specified by design
3) ESD susceptibility HBM according to EIA/JESD 22-A 114.
Note: Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” the normal operating range. Protection functions
are neither designed for continuous nor repetitive operation.
Data Sheet
5
Rev 1.0, 2012-09-01