IPW60R125CP Datasheet, PDF (5/10 Pages) Infineon Technologies AG – CoolMOS Power Transistor

5 Typ. output characteristics
I _D=f(V _DS); T _j=150 °C
parameter: V _GS
50
40
30
20 V 10 V ^{8 V} 7 V
6V
5.5 V
IPW60R125CP
6 Typ. drain-source on-state resistance
R _DS(on)=f(I _D); T _j=150 °C
parameter: V _GS
0.5
5.5 V
6 V 6.5 V
7V
0.4
20 V
5V
0.3
5V
20
0.2
4.5 V
10
0.1
0
0
5
10
15
V _DS [V]
7 Drain-source on-state resistance
R _DS(on)=f(T _j); I _D=16 A; V _GS=10 V
0.4
0.3
0.2
98 %
typ
0.1
0
20
0
10
20
30
I _D [A]
8 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max
parameter: T _j
120
40
50
C °25
80
C °150
40
0
-60
-20
20
60
100 140 180
T _j [°C]
0
0
2
4
6
8
10
V _GS [V]
Rev. 2.0
page 5
2006-06-19